It is a lightly doped region of the transistor.ģ. The base-collector region is always reverse biased so it offers a high resistive path for the collector circuit. The base-emitter region is always forward biased so it offers a very low resistive path for the emitter circuit. Base is the middle thin region of a transistor. The emitter-base junction is always forward biased so that it can supply large numbers of majority charge carriers to the Base. Emitter is responsible to supply charge carriers (NPN-electrons or PNP-holes) in the transistor. 1.1 Basic Construction of TransistorĪ transistor (NPN or PNP) consist of three regions of doped semiconductors, which are named as Emitter, Base and Collector.ġ. In NPN transistor charge carriers are electrons. It is shown in fig 1.1.Ī transistor in which a thin layer of p-type semiconductor is sandwiched between two layers of n-type semiconductor is known as NPN transistor.
In PNP transistor charge carriers are holes. A transistor is classified into two types based on its construction.Ī transistor in which a thin layer of n-type semiconductor is sandwiched between two layers of p-type semiconductor is known as PNP transistor. Basic Construction of BJTĪ BJT consists of two pn junctions so it is analogous to two back to back connected diodes as shown in fig 1.1. Note: The usage of the term transistor in this article will be used for bipolar junction transistor (BJT).